metalorganic chemical vapor deposition meaning in Chinese
金属有机化学气相沉积法
Examples
- To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
为了解决这一问题，电子回旋共振ecr等离子体增强有机金属气相沉积( ecr - pemocvd )应运而生。 - In this thesis , the zns , znse films and znse quantum dots ( qds ) have been obtained by metalorganic chemical vapor deposition ( mocvd )
本论文利用金属有机化学气相沉积( mocvd )系统控制生长条件制备了zns 、 znse薄膜和znse量子点。 - Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition . the p - type gan was achieved with high hole concentration 8 . 2810
应用mg离子注入mocvd法生长掺杂mg的gan中，在经过800 , 1h的退火后，获得高空穴载流子浓度8 . 2810 - At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ) , molecule beam epitaxy ( mbe ) as well as hvpe
目前gan的外延生长技术一般采用有机金属化学气相外延法( mocvd ) ，在蓝宝石衬底的( 0001 )面上外延生长gan材料，另外还有分子束外延技术( mbe )及卤化物汽相外延技术( hvpe )等。 - Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )
摘要以有机金属化学气象沉积在蓝宝石基板上成长由单一氮化镓成核层与氮化镓/氮化矽双缓冲层所形成的两种不同氮基础的多层量子井发光二极体结构。